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| VQ2004J Vishay Siliconix Quad P-Channel 60-V (D-S) MOSFET PRODUCT SUMMARY V(BR)DSS Min (V) -60 rDS(on) Max (W) 5 @ VGS = -10 V VGS(th) (V) -2 to -4.5 ID (A) -0.41 FEATURES D D D D D High-Side Switching Low On-Resistance: 2.5 W Moderate Threshold: -3.4 V Fast Switching Speed: 40 ns Low Input Capacitance: 75 pF BENEFITS D D D D D Ease in Driving Switches Low Offset (Error) Voltage Low-Voltage Operation High-Speed Switching Easily Driven Without Buffer APPLICATIONS D Drivers: Relays, Solenoids, Lamps, Hammers, Displays, Memories, Transistors, etc. D Battery Operated Systems D Power Supply, Converter Circuits D Motor Control Dual-In-Line D1 P S1 G1 NC G2 P S2 D2 1 2 3 4 5 6 7 14 13 12 11 10 9 8 D4 S4 G4 NC G3 S3 D3 P P Device Marking Top View VQ2004J "S" fllxxyy "S" = Siliconix Logo f = Factory Code ll = Lot Traceability xxyy = Date Code Top View Plastic: VQ2004J ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150_C) _ Pulsed Drain Currenta Power Dissipation Thermal Resistance, Junction-to-Ambient Operating Junction and Storage Temperature Range Notes a. Pulse width limited by maximum junction temperature. Document Number: 70220 S-04279--Rev. C, 16-Jul-01 www.vishay.com TA= 25_C TA= 100_C TA= 25_C TA= 100_C Symbol VDS VGS ID IDM PD RthJA TJ, Tstg Single -60 "30 -0.41 -0.23 -3 1.3 0.52 96 Total Quad Unit V A 2 0.8 62.5 -55 to 150 W _C/W _C 11-1 VQ2004J Vishay Siliconix SPECIFICATIONS (TA = 25_C UNLESS OTHERWISE NOTED) Limits Parameter Static Drain-Source Breakdown Voltage Gate-Threshold Voltage Gate-Body Leakage V(BR)DSS VGS(th) IGSS VDS = -60 V, VGS = 0 V Zero Gate Voltage Drain Current On-State Drain Currentb Drain-Source On-Resistanceb Forward Transconductanceb Common Source Output Conductanceb IDSS ID(on) rDS(on) gfs gos VDS = -48 V, VGS = 0 V, TJ = 125_C VDS = -10 V, VGS = -10 V VGS = -10 V, ID = -1 A TJ = 125_C VDS = -10 V, ID = -0.5 A VDS = -7.5 V, ID = -0.1 A 200 -1 -2 2.5 4.4 325 0.45 mS 5 8 W VGS = 0 V, ID = -10 mA VDS = VGS, ID = -1 mA VDS = 0 V, VGS = "30 V TJ = 125_C -60 -2 -110 -3.4 -4.5 "100 "500 -10 -500 mA m A nA V Symbol Test Conditions Min Typa Max Unit Dynamic Input Capacitance Output Capacitance Reverse Transfer Capacitance Ciss Coss Crss VDS = -25 V, VGS = 0 V f = 1 MHz 75 40 18 150 60 25 pF Switchingc td(on) Turn-On Time tr td(off) tf Notes a. For DESIGN AID ONLY, not subject to production testing. b. Pulse test: PW v300 ms duty cycle v2%. c. Switching time is essentially independent of operating temperature. 11 15 40 ns 20 20 30 30 VPDV10 Turn-Off Time VDD = -25 V, RL = 47 W ID ^ -0.5 A, VGEN = -10 V RG = 25 W 30 www.vishay.com 11-2 Document Number: 70220 S-04279--Rev. C, 16-Jul-01 VQ2004J Vishay Siliconix TYPICAL CHARACTERISTICS (TA = 25_C UNLESS OTHERWISE NOTED) Ohmic Region Characteristics -2.0 VGS = -10 V -1.6 ID - Drain Current (A) -9 V -8 V ID - Drain Current (mA) -16 -20 VGS = -4.0 V Output Characteristics for Low Gate Drive -1.2 -12 -3.8 V -7 V -0.8 -6 V -0.4 -5 V -4 V 0 0 -1 -2 -3 -4 -5 VDS - Drain-to-Source Voltage (V) -8 -3.6 V -4 -3.4 V -3.2 V 0 0 -0.4 -0.8 -1.2 -1.6 -2.0 VDS - Drain-to-Source Voltage (V) Transfer Characteristics -0.5 TJ = -55_C rDS(on) - On-Resistance ( ) -0.4 ID - Drain Current (A) VDS = -10 V -0.3 25_C 125_C 6 7 On-Resistance vs. Gate-to-Source Voltage I D = 0.1 A 5 4 3 2 1 0.5 A 1.0 A -0.2 -0.1 0 0 -2 -4 -6 -8 -10 VGS - Gate-Source Voltage (V) 0 0 -4 -8 -12 -16 -20 VGS - Gate-Source Voltage (V) On-Resistance vs. Drain Current 10 rDS(on) - Drain-Source On-Resistance ( ) (Normalized) rDS(on) - Drain-Source On-Resistance ( ) 2.00 Normalized On-Resistance vs. Junction Temperature VGS = -10 V ID = 0.5 A 8 1.75 1.50 6 1.25 4 VGS = -10 V 1.00 2 0.75 0 0 -0.5 -1.0 -1.5 -2.0 -2.5 -3.0 0.50 -50 -10 30 70 110 150 ID - Drain Current (A) TJ - Junction Temperature (_C) Document Number: 70220 S-04279--Rev. C, 16-Jul-01 www.vishay.com 11-3 VQ2004J Vishay Siliconix TYPICAL CHARACTERISTICS (TA = 25_C UNLESS OTHERWISE NOTED) Threshold Region -10 VDS = -5 V 160 ID - Drain Current (mA) -1 C - Capacitance (pF) TJ = 150_C 25_C 200 VGS = 0 V f = 1 MHz Capacitance 120 Ciss 80 Coss 40 Crss 125_C -0.1 -55_C -0.01 -1.0 -1.5 -2.0 -2.5 -3.0 -3.5 -4.0 -4.5 0 0 -10 -20 -30 -40 -50 VGS - Gate-to-Source Voltage (V) VDS - Drain-to-Source Voltage (V) Gate Charge -15.0 ID = -0.5 A VGS - Gate-to-Source Voltage (V) -12.5 t - Switching Time (ns) 100 Load Condition Effects on Switching tr tf td(off) 10 td(on) -10.0 VDS = -50 V -7.5 -80 V -5.0 -2.5 VDD = -25 V RL = 25 W VGS = 0 to -10 V (Pulse) 1 0 100 200 300 400 500 -0.1 ID - Drain Current (A) -1.0 Qg - Total Gate Charge (pC) 0 Drive Resistance Effects on Switching 100 tr gfs - Forward Transconductance (S) tf t - Switching Time (ns) td(off) 10 td(on) 400 500 Transconductance TJ = -55_C 25_C 300 125_C 200 VDD = -25 V RL = 50 W VGS = 0 to -10 V ID = -500 mA 1 10 RG - Gate Resistance () 100 100 0 0 -100 -200 -300 -400 -500 ID - Drain Current (mA) www.vishay.com 11-4 Document Number: 70220 S-04279--Rev. C, 16-Jul-01 |
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